C 1 2011-03-03 - 1 - 1 UD02N65 n-ch 650v fast switching mosfets symbol parameter rating units v ds drain-source voltage 650 v v gs gate-sou r ce voltage 30 v i d @t c =25 continuous drain current, v gs @ 10v 1 2 a i d @t c =100 continuous drain current, v gs @ 10v 1 1.3 a i dm pulsed drain current 2 4 a eas single pulse avalanche energy 3 16 mj i as avalanche current 3.4 a p d @t c =25 total power dissipation 4 40 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient (steady state) 1 --- 62 /w r jc thermal resistance junction-case 1 --- 3 /w id 650v 8 ? 2a the UD02N65 is the highest performance n-ch mosfets with specialized high voltage technology, which provide excellent rdson and gate charge for most of the sps, charger ,adapter and lighting applications . the UD02N65 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high efficient switched mode power supplies z electronic lamp ballast z led lighting z adapter/charger absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on)
C 2 2011-03-03 - 2 - 2 n-ch 650v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 650 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =1ma --- 0.37 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =1a --- 6.3 8 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 2 --- 5 v v gs(th) v gs(th) temperature coefficient --- -43 --- mv/ i dss drain-source leakage current v ds =520v , v gs =0v , t j =25 --- --- 2 ua i gss gate-source leakage current v gs = 30v , v ds =0v --- --- 100 na gfs forward transconductance v ds =10v , i d =1a --- 1.7 --- s q g total gate charge (10v) v ds =520v , v gs =10v , i d =1a --- 8 --- nc q gs gate-source charge --- 2.56 --- q gd gate-drain charge --- 2.67 --- t d(on) turn-on delay time v dd =300v , v gs =10v , r g =10 , i d =1a --- 4.8 --- ns t r rise time --- 18.4 --- t d(off) turn-off delay time --- 10.8 --- t f fall time --- 23.2 --- c iss input capacitance v ds =25v , v gs =0v , f=1mhz --- 290 --- pf c oss output capacitance --- 25 --- c rss reverse transfer capacitance --- 4 --- symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =50v , l=1mh , i as =1.5a 3.2 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 2 a i sm pulsed source current 2,6 --- --- 4 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v t rr reverse recovery time if=1a , di/dt=100a/s , t j =25 --- 178 --- ns q rr reverse recovery charge --- 382 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =50v,v gs =10v,l=1mh,i as =1.5a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD02N65
C 3 2011-03-03 - 3 - 3 n-ch 650v fast switching mosfets 0.0 0.4 0.8 1.1 1.5 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) v gs =10v v gs =8v v gs =7v v gs =6v v gs =5v 4 6 8 10 12 246810 v gs (v) rdson (m ? ) i d =1a 0 3 6 9 12 0 0.3 0.6 0.9 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 t j =150 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.9 1.6 2.3 3.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistanc e typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD02N65
C 4 2011-03-03 - 4 - 4 n-ch 650v fast switching mosfets 1 10 100 1000 1 5 9 13172125 v ds drain to source voltage(v) capacitance(pf) f=1.0mhz ciss coss crss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UD02N65
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